Nonvolatile memory

ABSTRACT

For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation of application Ser. No. 10/667,505filed Sep. 23, 2003.

BACKGROUND OF THE INVENTION

The present invention relates to a nonvolatile memory which permitselectrical writing and erasion of information to be stored, and to atechnique that can be effectively applied to a flash memory providedwith a replacing function to any defective area in memory array andhaving an area in which to store a management information table formanaging defective addresses.

A flash memory uses as its memory cells nonvolatile memory elements eachconsisting of a double gate-structured MOSFET having a control gate anda floating gate, and is caused to store information by varying theaccumulated charge of the floating gate and thereby varying thethreshold voltage of the MOSFET.

In a flash memory, the threshold voltage is varied when data are to bewritten into memory cells or data therein are to be erased, thecurrently available manufacturing techniques cannot avoid unevenvariations of the threshold voltage due to uneven characteristics ofmemory cells even if writing or erasion is done under the sameconditions, and sometimes there arise a defective memory cell or cellswhich do not allow sufficient threshold voltage variation.

A conventional flash memory is often provided with a replacing functionto replace a prescribed memory area, when there arises any defectivememory cell not allowing the threshold voltage to vary sufficiently,involving that defective memory cell with another normal memory area andanother area in which to store management table information for managingdefective addresses.

SUMMARY OF THE INVENTION

However, a conventional flash memory is usually designed to undergorewriting of management table information for managing defectiveaddresses and other such functions by an external controller. Moreover,since the reliability of data in a flash memory is less than that ofdata in a mask ROM or RAM because of threshold voltage fluctuations inmemory cells and their aging, in configuring a system using any flashmemory the reliability of data is increased by equipping the externalcontroller with an error checking and correcting function known as ECC.For this reason, a conventional flash memory imposes a greater load onthe system developer when a new system using any flash memory is to bedeveloped.

A conventional flash memory involves another problem that, where astorage area containing any defective memory cell is used as a systemarea for storing important data for the system, such as table data formanaging file positions on the memory, format information and addresstranslation information, it may become impossible to recognize thememory or for the system to operate normally.

An object of the present invention is to make it possible to reduce theload on the system developer by using a nonvolatile memory which permitselectrical writing and erasion of information to be stored, such as aflash memory.

Another object of the invention is to make it possible, in a nonvolatilememory which permits electrical writing and erasion of information to bestored, such as a flash memory, to prevent the system using it fromrunning into an abnormal state in which the system becomes unable, andenable the system to operate even if important data for the system, suchas management and address translation information, are damaged.

The above-stated and other objects and novel features of the presentinvention will become more apparent from the following detaileddescription when taken in conjunction with the accompanying drawings.

Typical aspects of the invention disclosed in this application will bebriefly described below.

Thus, according to a first aspect of the invention, a nonvolatile memorypermitting electrical writing and erasing of information to be stored,such as a flash memory, is provided with a replacing function to replacea group of memory cells including defective memory cells which areincapable of normal writing or erasion with a group of memory cellsincluding no defective memory cell; a numbers of rewrites averagingfunction to grasp the number of data rewrites in each group of memorycells and to so perform replacement of memory cell groups that there mayarise no substantial difference in the number of rewrites among aplurality of memory cell groups; and an error correcting function todetect and correct any error in data stored in the memory array, whereinfirst address translation information deriving from the replacingfunction and second address translation information deriving from thenumbers of rewrites averaging function are stored in respectivelyprescribed areas in the memory array, and the first address translationinformation and second address translation information concerning thesame memory cell group are stored in a plurality of sets in a timeseries.

As the nonvolatile memory described above has a replacing function andan error correcting function, there is no need to cause an externalcontroller to process replacement or error correction, it is madepossible to reduce the load on the system developer and, since aplurality of sets of address translation information are stored, it isfurther made possible to avoid, even if any set of address translationinformation is lost, an abnormal state in which the system becomesunable to operate by having another set of such information substitutedfor the lost information.

Preferably, the memory array should be provided with two or more areaswhich do not affect each other even if power supply is interruptedduring the process of writing into or erasing data in any of the memorycell groups, and the plural sets of first address translationinformation and second address translation information be storedsuccessively in the two or more second areas. This makes it possible toprevent, even if data in any area in which address translationinformation is to be stored are lost as a result of writing or erasion,such information stored in other areas from being lost, and to avoidwithout fail an abnormal state in which the system becomes unable tooperate.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating an embodiment of flash memory asan example of nonvolatile memory to which the present invention can beeffectively applied.

FIG. 2 illustrates the concept of replacement according to a firstformula in the flash memory of this embodiment.

FIG. 3 illustrates the concept of replacement according to a secondformula in the flash memory of this embodiment.

FIG. 4 illustrates the overall configuration of the flash memory of thisembodiment.

FIG. 5 is a flow chart of the sequence of processing by the managingsection of the flash memory of this embodiment.

FIGS. 6(A) to 6(C) show an example of configuration of each sector inregular areas and alternative areas of the flash memory of thisembodiment, in which FIG. 6(A) shows the configuration of a data areaand FIG. 6(B) shows the configuration of a sector management area wherethe flash memory is set to an AND or a NAND specification, and FIG. 6(C)shows the consiguration of a sector management area where the flashmemory is set to a SAND specification.

FIG. 7 illustrates a schematic configuration of the management table inthe flash memory of this embodiment.

FIGS. 8(A) to 8(D) illustrate a detailed configuration of each of theareas constituting the management table in the flash memory of thisembodiment.

FIG. 9 illustrates the concept of averaging the number of rewrites inthe flash memory of this embodiment.

FIG. 10 illustrates the manner of hysteresis management of themanagement table in the flash memory of this embodiment.

FIG. 11 illustrates an example of work RAM configuration in the flashmemory of this embodiment.

FIG. 12 is a flow chart showing the sequence of processing in the flashmemory of this embodiment to read data in the management table area outof the flash memory array into the work RAM.

FIG. 13 is a flow chart showing a detailed procedure of table copying inthe flow chart of FIG. 12.

FIG. 14 is a flow chart showing the procedure in the flash memory ofthis embodiment to store data in the management table area out of thework RAM into flash memory array.

FIG. 15 is a flow chart showing the procedure of address translation inthe flash memory of this embodiment.

FIG. 16 is a flow chart showing the sequence of processing at the timeof turning on power supply in the flash memory of this embodiment.

FIG. 17 is a timing chart showing the timing of automatic reading at thetime of turning on power supply.

FIG. 18 is a flow chart showing the procedure that is taken if anyabnormal writing arises in write processing in the flash memory of thisembodiment.

FIG. 19 is a flow chart showing the procedure that is taken if anyabnormal erasion arises in erase processing in the flash memory of thisembodiment.

FIG. 20 is a timing chart showing the flow of usual data readingoperation in the flash memory of this embodiment.

FIG. 21 is a timing chart showing the flow of sequential data readingoperation in the flash memory of this embodiment.

FIG. 22 is a timing chart showing the flow of data rewriting operationin the flash memory of this embodiment.

FIG. 23 is a timing chart showing the flow of data erasing operation inthe flash memory of this embodiment.

FIG. 24 is a timing chart showing the flow of operation to shift to thedeep standby mode and that to return from the deep standby mode to theusual operation mode in the flash memory of this embodiment.

FIG. 25 is a timing chart showing the flow of operation known as hotrestart that takes place at the time of turning on power supply in theflash memory of this embodiment.

FIG. 26 is a diagram illustrating an example of system configurationusing the flash memory of this embodiment.

FIGS. 27(A) and 27(B) are timing charts showing the signal timingsbetween the CPU and the flash memory in the system of FIG. 26.

FIGS. 28(A) and 28(B) are flow charts showing the procedure of operationtaken when test commands have been entered in the flash memory of thisembodiment.

FIG. 29 is a flow chart showing the sequence of processing at the timepower supply is turned on in the flash memory of another embodiment ofthe invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

One preferred embodiment of the present invention will be described indetail below with reference to the accompanying drawings.

FIG. 1 is a block diagram illustrating an embodiment of flash memory asan example of nonvolatile memory to which the present invention can beeffectively applied. The flash memory of this embodiment is composed ofa host interface section 101 to perform inputting and outputting ofsignals to and from a controller, such as an external host CPU, aninterface control section 110 to control the host interface section 101,a memory section 120 consisting of a flash memory array 121 in which aplurality of nonvolatile memory elements (memory cells) are arranged ina matrix and its peripheral circuits, and a managing section 130 tomanage defective addresses and the like. These elements are formed overa single semiconductor chip, such as a monocrystalline silicon chip.

Whereas conventional flash memories include a plurality of kinds ofchips differing in the specification of external terminals, and theflash memory of this embodiment is so configured as to be able toapparently operate as a chip of a specification known as the NAND type,one of a specification known as the AND type or one of a specificationknown as the Super AND (SAND) type out of the plurality of conventionaltypes, and as which of these types it is to operate is determined by thebonding option, i.e. the set state of a prescribed bonding pad B.O.connected to the interface control section 110. A difference inspecification means differences in the types and arrangement of externalterminals.

In this embodiment of the invention, the flash memory array 121 of thememory section 120 consists of the AND type in which a plurality ofmemory cells are connected in parallel between bit lines and sourcelines, though it is not limited to this configuration. When theinterface control section 110 is set to “AND” in terms of theaforementioned bonding option, any command from outside entered into theinterface control section 110 is supplied as it is to the memory section120.

The interface control section 110 is configured of interfaces forconverting commands according to the setting by the bonding optionincluding a NAND/AND interface 111 which, if the interface controlsection 110 is set to “NAND”, converts commands of the NANDspecification into commands of the AND specification and supply them tothe memory section, a SAND/AND interface 112 which, if the interfacecontrol section 110 is set to “SAND”, analyzes commands of the SANDspecification and generates control signals for the memory section 120and the managing section 130, and an interface selector circuit 113 forselecting signals for supply to the memory section 120 between signalscoming via either of these interfaces 111 and 112 and signals from themanaging section 130.

The memory section 120 is configured of the flash memory array 121including nonvolatile memory elements, a power supply circuit 122 forgenerating voltages needed for writing data into and erasing data in thememory array 121, two buffer memories 123A and 123B for temporarilystoring write addresses and write data to be supplied to the flashmemory array 121 and read addresses read out of the flash memory array121, a relieving circuit 124 for translating the address when an areacontaining any defective memory cell is replaced in a prescribed unit(e.g. a segment consisting of 128 sectors) with a normal area, and anAND control circuit 125 for generating an actuation signal for the powersupply circuit 122, supplying an address entered via the host interfacesection 101 to the relieving circuit 124 and converting read data andwrite data.

The flash memory array 121 includes a decoder for decoding addresses andselecting word lines and a sense amplifier for amplifying signals on bitlines in addition to the memory array. Each of the memory cellsconstituting the memory array 121 consists of a MOSFET having a floatinggate and a control gate, and is caused to store information by avariation in the threshold voltage according to the quantity of electriccharges injected to the floating gate. The buffer memories 123A and 123Bconsist of, though not limited to, SRAMs. Whether to cause the relievingcircuit 124 to perform segment-by-segment replacement is determinedaccording to the result of wafer test.

The managing section 130 is configured of an inter-circuit blockinterface 131 for enabling signals to be exchanged between the interfacecontrol section 110 and the managing section 130, a sequencer 132consisting of a programmed control type controller, such as a CPU, forcontrolling operations within the chip, a sequencing ROM 133 for storingthe operations of the sequencer in a form like a microprogram consistingof control codes, a register 134 for use by the sequencer, a work RAM135 for developing an address translation table or providing a work areafor the sequencer 132, an ECC circuit 136 for checking and correctingerrors, and a DMA transfer control circuit 137 for controlling datatransfers between the memory section 120 and the work RAM 135 or the ECCcircuit 136.

In the flash memory of this embodiment, the memory array 121 is soconfigured that the unit writing is a group of memory cells consistingof 2112 bytes (hereinafter referred to as a sector) connected to asingle word line. Further in the memory array 121, the management ofareas is differentiated between a regular area and a reserve area forreplacing a sector containing any defective memory cell in the regulararea. A defective address management table to establish correspondenceof sectors in the regular area to sectors in the reserve area isgenerated by the managing section 130 and stored into the flash memoryarray 121. During normal operation, the defective address managementtable is developed in the work RAM 135 and referenced. When an addressentered from outside designates a sector containing a defective memorycell, this defective address management table is referenced to translatethe entered address into an address designating an alternative sector inthe reserve area, and the flash memory array 121 is accessed accordingto this translated address. The defective sector is thereby replaced.

Further in the flash memory of this embodiment, two different formulasof replacement processing are available FIG. 2 illustrates the conceptof replacement according to a first formula. In this first formula ofreplacement processing, the flash memory array 121 is divided into aregular area and a reserve area for replacing a sector containing anydefective memory cell in the regular area. Each sector is furtherdivided into a data area for storing data as such (user data) and asector management information area for storing an MGM code indicatingwhether or not a given sector contains any defective memory cell, anerror correction code and so forth. The regular area consists of Nsegments (N=64, for instance) each consisting of n sectors (n=128, forinstance). The reserve area is also composed of N segments (of which thenumber of sectors is variable) corresponding to the N segments of theregular area, and the segments in the regular area are in one-to-onecorrespondence with those in the reserve area.

Sector management information in the management table is composed of anentry ENT consisting of an information column ADL indicating theposition of any defective sector in the replacing source and a flag FLGindicating whether or not the alternative sector is a good sector or adefective sector. For instance if an alternative sector Nn+2 in FIG. 2is defective, “1” is set on the flag of the corresponding entry. In eachentry of the management table, information indicating the position of adefective sector is registered as a value of offset OFS from the leadingaddress of the segment. Entries of the sector management information inthe management table are in one-to-one correspondence with sectors inthe reserve area.

The managing section 130, if for instance the sector of the physicaladdress “2” in FIG. 2 is found to be a defective sector as a result ofwrite operation, stores data into an alternative sector (e.g. Nn+1) ofsegment 0 in the alternative area corresponding to segment 0 in theregular area to which the pertinent sector belongs. Upon successfulstoring of the data, the offset value “0002h” of the sector of thereplacing source is stored into the entry, corresponding to this sector,in the management table and, at the same time, the flag is set to “0”.Further, the managing section 130, when accessing a sector in segment 0of the regular area, computes the offset value from the address of thepertinent sector, judges whether or not it is a defective sector bysuccessively referencing entries in segment 0 of the management tableand, if it is registered as a defective sector, accesses a sector,corresponding to that entry in the reserve area. Address translationtakes place on this occasion.

This replacement formula permits a reduction in the data quantity of thetable, i.e. the storage capacity of the work RAM 135, because it dividesthe regular area into segments for the management purpose and thereforeoffset values can be used, instead of physical addresses, as sectorposition information to be registered in the defective addressmanagement table. The length of time taken to search the managementtable can be shortened accordingly.

FIG. 3 illustrates the concept of replacement according to a secondformula. While the processing of replacement according to the firstformula divides both the regular area and the alternative area of theflash memory array into segments, that according to this second formulainvolves no division into segments, but a defective sector having arisenanywhere in the regular area is replaced by some sector in thealternative area. This formula, though it necessitates a greater dataquantity of the table, i.e. a greater storage capacity of the work RAM135, and accordingly a greater length of time taken to search themanagement table because physical addresses are used as defective sectorposition information to be registered in the management table, it hasits own advantages that the alternative area can be utilized moreefficiently, computation of offset values and the like can be dispensedwith and the processing of replacement is simplified. More specifically,while the first formula requires a change in the segment size in thereserve area if defective sectors subsequently arise concentratively ina given segment, the second formula needs no such change.

To add, instead of selectively applying either the first formula or thesecond formula of replacement processing, it is also conceivable toapply the first formula to replacement of any defective sector detectedin the testing stage and to apply the second to the replacement of anydefective sector that has emerged in a state of regular use after theshipment of the product. Further, as shown in FIG. 4, it is alsoconceivable to provide in the alternative area an alternative segmentarea of which the maximum number of alternative sectors is variable, analternative segment area of which the maximum number of alternativesectors is fixed, and a reserve alternative area, to apply the firstformula using the alternative segment area of which the maximum numberof alternative sectors is variable to the replacement of any defectivesector detected in the testing stage, the first formula using thealternative segment area of which the maximum number of alternativesectors is fixed to the replacement of any defective sector that hasemerged in a state of regular use after the shipment of the product, andthe second formula of using the reserve alternative area to thereplacement of any defective sector that has emerged in a segment forwhich all the sectors of the alternative segment have been used up.

FIG. 5 shows the sequence of processing by the managing section in asystem using a flash memory in which the first formula applying thealternative segment area of which the maximum number of alternativesectors is fixed until midway in the processing to the replacement ofany defective sector arising in a state of regular use and the secondformula of using the reserve alternative area to the replacement of anydefective sector that has emerged in a segment for which all the sectorsof the alternative segment have been used up. When an external controldevice such as a host CPU (hereinafter referred to as an externaldevice) transmits a command and an address to the flash memory, theflash memory receives them and first computes the corresponding segmentand offset on the basis of the received logical address (steps S1 andS2).

Next, by referencing segment management information in the defectmanagement table, it is determined whether or not the sector to beaccessed is a defective sector (steps S3 and S4). If it is determined tobe a defective sector, address translation is performed to designationan alternative sector, corresponding to the pertinent entry in thealternative segment (step S5). On the other hand, if no defective sectoris detected in the determination at step S4, the reserve alternativearea management information in the defect management table is referencedto determine whether or not the sector to be accessed is a defectivesector (steps S6 and S7). If it is determined to be a defective sector,address translation is performed to designate a correspondingalternative sector in the reserve alternative area (step S8).

On the other hand, if no defective sector is detected in thedetermination at step S4 and step S7, a corresponding sector in theregular area is designated directly (step S9). After that, thedesignated sector is accessed, and data are either read or written (stepS10). Then, if the received command is a read command, the written dataare or, if it is a write command, a signal indicating the end of writingor a status is transmitted to the external device to end the processing(step S11).

FIGS. 6(A) to 6(C) show an example of configuration of each sector inregular areas and alternative areas. The sectors are divided into, forinstance, a 2096-byte data area and a 16-byte sector management area, ofwhich the configuration of the data area is shown in FIG. 6(A), and thatof the sector management area where the flash memory is set to the ANDor the NAND specification is shown in FIG. 6(B). FIG. 6(C) shows theconfiguration of the sector management area where the flash memory isset to the SAND specification.

The data area of each sector, as shown in FIG. 6(A), is composed of four512-byte page areas Page 0 through Page 3, 8-byte management areas forstoring management information, each corresponding to one or another ofthe page areas, and areas for storing 16-byte error correcting codesECC0 and ECC1. In the flash memory of this embodiment, a data areachange command is available, and when only a read command is entered,data in the 512-byte page areas Page 0 through Page 3 are read tooutside the chip. If a read command is entered after a data area changecommand is entered, data of 520 bytes including the 512-byte page areasPage 0 through Page 3 and the following data of 8 bytes each are read tooutside the chip. Instead of changing the data unit by using a command,it is conceivable to make available a plurality of commands or to adopta configuration in which the read data unit is changed according to amode set by a bonding option. It is also conceivable to use themanagement area following each page area for storing the ECC code ofdata in the corresponding page area.

Each sector management area, as shown in FIG. 6(B), consists of an areafor storing an MGM code indicating whether or not the pertinent sectoris a good sector, an area for storing an identification code of thesector, an area for storing a management header for managing thehysteresis of the management area, an area for storing managementinformation on the averaging of the numbers of rewrites (arrangement andthe counts of erasing) (WL processing), and an area for storing errorcorrection codes CECC0, CECC1 and HECC. A sector management area set tothe SAND specification as shown in FIG. 6(C), has a smaller area forstoring management information on the averaging of the numbers ofrewrites than in the case of NAND or AND and a larger area for storing amanagement header.

FIG. 7 and FIGS. 8(A) to 8(D) illustrate the configuration of individualsectors in the management table area. FIG. 7 illustrates the overallconfiguration of a sector, and each of FIGS. 8(A) through 8(D), adetailed configuration of each of the areas shown in the areas shown inFIG. 7. Each sector in the management table area, as shown in FIG. 7, isdivided into an area setting area for storing information indicating thearea of the management table, a swap management area for storinginformation on substitution on a segment-by-segment basis, an area forstoring management information on alternative segments, an area forstoring management information on reserve alternative areas, and an areafor storing management information on the averaging of the numbers ofrewrites. Though not shown in FIG. 7, an area for storing errorcorrection codes is also provided at the end. FIG. 8(A) shows theconfiguration of the swap management area, FIG. 8(B), that ofalternative segment management areas, FIG. 8(C), that of the alternativearea management area, and FIG. 8(D), that of the area for the managementarea of the averaging of the numbers of rewrites.

Next will be described the averaging of the numbers of rewrites.

The averaging of the numbers of rewrites in a conventional flash memoryis to search, when the number of rewrites in a given sector has reacheda certain level, for a sector whose number of rewrites is the smallestand to replace the address. Unlike that, the averaging of the numbers ofrewrites in the flash memory of this embodiment, as shown in FIG. 9, isblock-by-block processing, in which each of the blocks which constitutethe flash memory array consists of 1024 sectors, and when the number ofrewrites in a given sector has reached a certain level, addresses aresuccessively rotated by one block at a time so as to store the data inthat sector into a sector in the same offset position in an adjoiningblock.

More specifically, referring to FIG. 9, when the number of rewrites inthe sector of offset address 1 in block 0 has reached a prescribednumber m (m=1000 for instance) as seen in (A)→(B), data B in the sectorof offset address 1 in block 0 are shifted to and written into thesector of offset address 1 in block 1 as shown in (C), data G in thesector of offset address 1 in block 1 are shifted to and written intothe sector of offset address 1 in block 2, data J in the sector ofoffset address 1 in block 2 are shifted to and written into the sectorof offset address 1 in block 3, and so forth. Thus by successiveshifting from one block to next, data and the number of rewrites arestored. Further, interlocked with the shifting of the data writing area,the number of shifts per offset is written into and stored in thenumbers of rewrites averaging management area.

The conventional way of averaging the numbers of rewrites, by which,when the number of rewrites in a given sector has reached a certainlevel, a sector whose number of rewrites is the smallest is searched forand address replacement is performed has the disadvantage that aconsiderable length of time is taken to find a sector whose number ofrewrites is the smallest and that the size of the address translationtable becomes great. By contrast, the shift-type method of averaging thenumbers of rewrites used in this embodiment of the invention has theadvantages that the processing to determine the sector to which data areto be shifted and the address of the destination of the shift can beobtained by computation, thereby making the address translation tableunnecessary. As the numbers of rewrites averaging management area hasonly to store the number of shifts, consisting of no more than a fewbits, the required storage area can be far smaller than where addressesare to be stored.

Next will be described the work RAM 135.

In the flash memory of this embodiment, when power supply is turned on,table data stored in the management table areas of the memory array 121are read out into and developed in the work RAM 135. Its configurationis such that, while the power supply is on, the data in the memory array121 are not rewritten even if the table data are updated, and when thepower supply is turned off, data in the work RAM 135 are stored into themanagement table areas of the memory array 121. Moreover, thisembodiment has a configuration in which, as shown in FIG. 10, twomanagement table areas available in the memory array are alternatelyused to store table data and each of the management table areas isfurther divided into a plurality of (e.g. eight) areas to store the datasequentially. It is also conceivable to rewrite, if table data areupdated when the power supply is on, data in the management table on thework RAM and to rewrite table data in the corresponding management tablein the memory array 121.

As stated above, by reading out into and developing on the work RAM 135table data stored in the management table areas of the flash memoryarray 121, the determination of whether or not the access address is theaddress of a defective sector and the acquisition of the address of analternative sector can be accomplished in a short period of time.Furthermore, the configuration in which table data are storedalternately into one or the other of two management table areas makespossible, even if all the data in one of the management table areas arelost by a power interruption during rewriting, data in the managementtable of one generation before can be reproduced. In addition, theconfiguration in which each management table area is divided into aplurality of areas into which data are sequentially stored results inrealization of averaging of the numbers of rewrites within themanagement table area, thereby making it possible to prevent thereliability of data from being deteriorated by the surpassing of abearable limit of the number of rewrites.

Incidentally in this embodiment, since the quantity of table data is nottoo large to be accommodated in the data area of one sector having astorage capacity of 2096 bytes, each management table storage area ismade corresponding to one sector, and each of the management table areas0 and 1 is provided corresponding to one block. Further in FIG. 10, themanagement headers represent the positions of management tables storedin different areas in temporal order. Thus, the management table storedin the area bearing the biggest management header number is the latesttable, and the management table stored in the area bearing the smallestmanagement header is the earliest table. Therefore, if the sequencer 132references all the management headers in the management table areaswithin the flash memory array 121 and reads out the table data havingthe largest value among them, the latest management table can beobtained.

FIG. 10 shows how a management table stored in the area bearing themanagement header “15” in the management table area (1) is read into thework RAM 135, updated according to writing into the flash memory array,and stored into the area bearing the management header “0” in themanagement table area (0). In the management header of the managementtable immediately after reading out to the work RAM is stated “15”, asector address “2007h” is stated in the main address column, and asector address “217Fh” (management header=“14”) stored in the managementtable one before is stated in the reserve table address column.

Then, this management table loaded on the RAM is updated, and themanagement header of the management table is changed from “15” to “16”.In the main table address column is stated the sector address “2178h” ofthe area whose management header number is the smallest (the managementheader=“0” in FIG. 10) in the management table area (0) in which thepertinent table is to be stored next, and in the reserve table addresscolumn is stated the sector address “2007h” (the management header=“15”)at which the table was stored when it was readout. When power supply isinterrupted, management table data on the RAM are stored in accordancewith the updated sector address of the main table address column.

The term “reserve table” is used here because, according to themanagement table storage formula of this embodiment of the invention, ifthe current or the latest management table data are lost or damaged forany reason, the management table one before can be read out and used. Ifdata in that management table one before is found abnormal, data in themanagement table another before can be used. This enables important datafor the system to be restored, and makes it possible to minimize therisk of such abnormality that the memory can no longer be recognized orthe system cannot be actuated.

FIG. 11 illustrates a typical configuration of the work RAM 135. Asshown in FIG. 11, the work RAM 135 consists of a good sector codestorage area GCA, an identification code storage area DCA, a managementheader storage area MHA, a setting storage area RNA for averaging thenumbers of rewrites, a defect management table storage area IMA, astorage area RMA for the numbers of rewrites averaging managementtables, a sequencer work area WKA, a main table address storage area MAAin which the management tables for use at the time of reading arestored, and a reserve table storage area RAA indicating the address atwhich the management table at the time of previous reading was stored.

Data in other areas than the work area WKA are read out of the flashmemory array 121 at the time power supply is turned on, and developed inthe various areas constituting the work RAM 135. Updating of the defectmanagement table ensuing from replacement processing when a defectivesector is detected anew turing operation and updating of the managementtable in connection with the averaging of the numbers of rewrites when asector in which the number of rewrites has reached a prescribed levelare carried out on the work RAM 135. Updating of the main table addressand the reserve table address takes place when data in the work RAM 135are stored into the flash memory array 121.

FIG. 12 shows the sequence of processing to read data in the managementtable area out of the flash memory array 121 into the work RAM 135.

The sequencer 132 first searches the management table area (0) of theflash memory array (step S21). Then it checks the identification code tojudge whether or not there are effective management table data (stepS22). If no effective management table data are found in the managementtable area (0) here, the process goes ahead to step S33 to search themanagement table area (1) and check the identification code to judgewhether or not there are effective management table data (step S34) Ifno effective management table data are found in the management tablearea (1) here again, the processing is ended as an error is determinedto have arisen.

If an effective management table is found in the management table area(1) at step S34, the management header is referenced, data in the tablewhose management header number is the largest in the management tablearea (1) are loaded onto the work RAM, and the address of that table isregistered as the main table address (step S35). Then, the processshifts to table copying (step S40) to copy those table data into themanagement table area (0). In case data in one of the management tablearea have been destroyed, a situation in which effective data in both ofthe management table areas have been lost can be avoided by copying datain the other management table area.

If at step S22 above it is judged by checking the identification codethat there are effective management table data in the management tablearea (0), the process shifts to step S23 to read management headers outof all the sectors in the management table area (0), to load onto thework RAM data in the table whose management header number is thelargest, and to register the address of that table as the main tableaddress (step S24). Next, the management table area (1) is searched(step S25). Then the identification code is checked to judge whether ornot there are effective management table data (step S26). If noeffective management table data are found in the management table area(1) here, the processing shifts to table copying at step S40 to copy thedata read out of the management table area (0) into the management tablearea (1).

If it is judged at step S26 that there is an effective management tablein the management table area (1), the process shifts to step S27 to readmanagement headers out of all the sectors in the management table area(1), and compares the largest number among the management headers in themanagement table area (1) with the largest number among the managementheaders in the management table area (0) (step S28). If the largestmanagement header in the management table area (1) is found greater, theprocess shifts from step S29 to step S30 to load table data in thesector whose management header is the largest in the management tablearea (1) onto the work RAM, to register the address of the pertinenttable as the main table address, and at the same time to register theaddress of the table of the sector whose management header is thelargest in the management table area (0) as the reserve table address(step S31). If it is judged at step S29 that the largest managementheader in the management table area (0) is greater than the largestmanagement header in the management table area (1), the process shiftsto step S32 to register the address of the table of the sector whosemanagement header is the largest in the management table area (1) as thereserve table address.

FIG. 13 is a flow chart showing a detailed procedure of table copying atstep 40 in the flow chart of FIG. 12.

In this table copying, it is first judged whether or not the discoveredtable is in the management table area (0) (step S41). If the discoveredtable is in the management table area (0), the leading address of themanagement table area (1) of area setting information is made theleading address stored in the table within the flash memory array atstep S42. If the discovered table is in the management table area (1),the leading address of the management table area (0) of area settinginformation is made the leading address stored in the table within theflash memory array at step S43. Then, table data already loaded on thework RAM are written into the flash memory array from the aforementionedstored leading address onward (step S44).

It is then judged whether or not the writing has been normally completedand, if it has, the pertinent leading address is registered in thereserve table address column of the work RAM as the reserve tableaddress (steps S45 and S46). If the writing was not normally completedat step S44, at step S47 the next sector in the same management tablearea is made the address at which table data are to be stored, and theprocess returns to step S44 to write the table data loaded on the workRAM. If writing into all the sectors in the management table area istried but no normal writing of table data has been done, it is judged tobe a write error and the processing is ended (step S48).

FIG. 14 shows the procedure of storing data in the management table areafrom the work RAM 135 into the flash memory array 121.

In this table storing, first the table management header on the work RAMis incremented (+1) (step S51). Then, the address next to the reservetable address is made the table storage address in the flash memoryarray step S52). Then, the table data on the work RAM 135 are written atthe table storage address of the memory array (step S53).

Then it is judged whether or not the writing has been normally completedand, if it has, the table address is replaced. In other words, the maintable address is registered in the reserve table address column of thework RAM as the reserve table address, and the latest table address ofthe flash memory array is registered in the reserve table address columnof the work RAM as the main table address (steps S54 and S55). If thewriting was not normally completed at step S54, at step S56 the nextsector in the same management table area is made the address at whichtable data are to be stored, and the process returns to step S53 towrite the table data stored within the work RAM into the flash memoryarray. If writing into all the sectors in the management table area istried but no normal writing of table data has been done, it is judged tobe a write error and the processing is ended (step S57). Incidentally,when the above-described table storing is to be executed when powersupply is off, the table replacement at step S55 is unnecessary.

FIG. 15 shows the procedure of address translation in the flash memoryof this embodiment. This address translation is executed when a commandto read, write data or erase data is entered.

In the address translation, first, numbers of rewrites averagingmanagement information is read out of the work RAM, and the number ofblock shifts corresponding to the access address is selected (step S61).Next, according to the selected number of block shifts, the accessaddress is translated (step S62). Then, the offset value is computed onthe basis of the translated address, and management information of thecorresponding segment on the defect management table is selected byusing that offset value (step S63). Next, the management table issearched to judge whether or not the sector of the pertinent address isregistered as a defective sector (step S64). If the sector to beaccessed here is found registered as a defective sector, alternativeaddress translation is performed to acquire the alternative sectoraddress of the corresponding alternative segment (step S65). If thesector to be accessed at step S64 is found not registered as a defectivesector, no address translation is performed, but this address is madefinal (step S66).

Next will be described the operation at the time of turning on powersupply in the flash memory of this embodiment with reference to FIG. 16.The flash memory of this embodiment is provided in its host interfacesection 101, though this is not an absolute requirement, with a sourcevoltage detecting circuit for detecting the source voltage level, a risedetection signal of the source voltage from this source voltagedetecting circuit is supplied to the interface control section 110, andinternal circuits are actuated (step S71). The interface control section110, upon receiving the rise detection signal, issues an actuationcommand to the managing section 130 (step S72).

Then in the managing section 130, the sequencer 132 is initialized, andprocessing to load management table data from the flash memory section120 onto the work RAM 135 is executed (steps S73 and S74). After theloading of the management table data is completed, a completion signalis sent from the managing section 130 to the interface control section110, and the interface control section 110 judges whether or not apreload enable (PRE) signal, entered from an external device, isasserted at an effective level (e.g. a high level). If the PRE signal isnot so asserted, the process shifts to a standby status in which acommand input from the outside is waited for (steps S75 and S76).

If the PRE signal is asserted, the process shifts to an automatic readstatus in which data in the sector of address “0” in the flash memoryarray 121 can be supplied outside via a buffer memory 123A (step S77)Incidentally, the configuration is such that when the process shifts tothe standby status of step S76 or the automatic read status, a signal/MRES indicating this operation is either ready or busy, supplied from aprescribed external terminal, varies to a high (or low) level.

FIG. 17 shows the timing of automatic reading at the time of turning onpower supply. This automatic reading is executed by having the externaldevice assert the PRE signal at a high level in advance of turning onthe power supply.

When the flash memory is actuated in a state in which the PRE signal isasserted at a high level at the time of turning on the power supply, themanagement table is loaded after an actuation command is sent to themanaging section 130 and the managing section is initialized and, afterthe completion of loading an automatic read command and an addressindicating “0” are supplied from the interface control section 110 tothe managing section 130. Then, the sequencer 132 references thismanagement table, performs address translation if necessary, andsupplies the translated address and the read command to the flash memorysection 120. Data in the sector of address “0” in the flash memory array121 are read out and stored into the buffer memory 123A.

Next, the sequencer 132 sends the data that have been read out to theECC circuit 136 to have them checked for errors and any error corrected.Upon completion of ECC processing, a signal indicating transferabilityis sent from the managing section 130 to the interface control section110, and the interface control section 110 varies the signal /MRESindicating this operation to be either ready or busy, supplied from thehost interface section 101, to a high level. When the external devicedetects the variation of this signal /MRES and enters a read clock RCKinto the flash memory, data held in the buffer memory 123A aretransferred to the external device via the host interface section 101.

FIG. 18 shows the procedure that is taken if any abnormal writing arisesin write processing. It has to be noted that, in this specification, theterms “writing” and “rewriting” are differentiated from each other byreferring to writing data into all the memory cells in the data area ofone sector as “writing” and to writing data into only some memory cellsin the data area of one sector as “rewriting”.

When a write operation (step S81) in response to a write command fromthe external device has ended and any abnormal writing is detected by averify operation, a signal to notify the abnormal ending is sent fromthe memory section 120 to the managing section 130 (step S82). Then, themanaging section registers the pertinent write address in the managementtable of the work RAM 135 as a defective address (step S83). Themanaging section performs address translation to replace it with anormal address in the alternative area, and sends the translated addressas the write address to the memory section 120 together with a writecommand (step S84). Then, the memory section executes writing in thereplacing sector (step S85). Upon normal ending of the writing, a signalto notify the normal ending is sent from the memory section to themanaging section.

Next, the managing section checks whether or not an erasion error flagis standing and, if one is, stores the management table the work RAMinto the flash memory array (steps S86 and S87). If no erasion errorflag is standing or if, after storing the management table into theflash memory array, the number of times the sector whose managementtable has been rewritten is checked and is found not to have reached aprescribed level, an end signal is sent to the interface controlsection, and the interface control section so controls the hostinterface section as to supply the end signal outside the chip (stepS88). If the number of times the sector has been rewritten is found tohave reached the prescribed level, after block shifting is carried outby averaging the numbers of rewrites, the end signal is sent to theinterface control section, which so controls the host interface sectionas to supply the end signal outside the chip (step S89).

To add, regarding the erasion flag, since data in the sector into whichwriting is to be done is erased by the write operation at step S81, ifany abnormality arises in that data erasion, an erasion flag will beerected and, at the same time, replacement is performed to update themanagement table within the work RAM. Therefore in this embodiment, itis checked whether or not the erasion error flag is standing after theend of writing and, if it is, the management table within the work RAMis stored into the flash memory array.

FIG. 19 is a flow chart showing the procedure that is taken if anyabnormal erasion arises in erase processing in the flash memory of thisembodiment. Incidentally this erase processing covers both erasion by anerase command and temporary erasion before writing by a write commandfrom the external device.

When the operation to erase data in a sector designated according to anerase command or a write command from the external device (step S91) hasended and any abnormality in erasion is detected by a verify operation,a signal to notify the abnormality is sent from the memory section 120to the managing section 130 (step S92). Then, the managing sectionregisters the pertinent erase address or write address in the managementtable within the work RAM as a defective address (step S93). Then itperforms address translation for replacement by a normal sector in thealternative area and, using the translated address as the erase address,sends an erase command and address to the memory section (step S94) Thememory section executes erasion on the replacing sector (step S95). Uponnormal ending of the erasion, a signal to notify the normal ending issent from the memory section to the managing section. Though this is notan absolute requirement, the managing section may, when a signal tonotify the normal ending has been received at step S92, performprocessing to raise the threshold voltage of memory cells in the sectorin which the pertinent erasion has taken place to increase the thresholdvoltage of any memory cell less than 0 V (a depleted state) to above 0V.

Next the managing section, after erecting the erasion error flag, sendsan end signal to the interface control section, and the interfacecontrol section so controls the host interface section as to supply theend signal outside the chip (step S96). Incidentally, when erasion hasbeen done in response to a write command, the process shifts to writeprocessing of FIG. 18 without supplying the end signal.

FIG. 20 shows the flow of usual data reading operation in the flashmemory of this embodiment This usual data reading is started by theinputting of a read command and a read address from the external deviceto the flash memory. The read address consists of a sector address SAand a column address CA designating any byte data in the sector.

The entered read command controls the interface control section to besent to the managing section, which performs address translation byusing the management table. This address translation involves theaddress having undergone block shifting by the averaging of the numbersof rewrites and the replacing address resulting from the defectiveaddress replacement. After the address translation, the read command andtranslated addresses SA′ and CA are sent from the managing section tothe memory section. Then in the memory section, data in a designatedsector of the flash memory array 121 and data in the next sector areread out, and held in the buffer memories 123A and 123B, respectively.

Upon completion of reading data out to the buffer memories, a signal tonotify the completion is sent from the memory section to the managingsection and, in response to this signal, the managing section controlsthe DMA transfer control circuit 137 and the ECC circuit 136 to performerror detection and correction for data in the buffer memory 123A first.Upon completion of this ECC processing, the managing section notifiesthe interface control section of transferability, and the interfacecontrol section informs of the external device of the readiness by usinga read/busy signal /RB.

Then, in response to the inputting of a clock from the external device,data in the buffer memory 123A are supplied outside the chip, andtransferred to the external device. In parallel with the data transfer,error detection and correction processing is executed for data in thebuffer memory 123B. Upon completion of this ECC processing, theinterface control section is informed of the transferability of data inthe buffer memory 123B. Upon completion of the transfer of data in thebuffer memory 123A, the transfer of data in the buffer memory 123B isstarted in response to a request from the external device.

FIG. 21 shows the flow of sequential reading operation in the flashmemory of this embodiment. This sequential reading is a function that isactuated by the inputting of a sequential read command and read addressfrom the external device to the flash memory, and can read out all thedata from the read address onward as long as the external devicecontinues inputting the clock. The sequential reading is done in aprocedure of usual reading illustrated in FIG. 20.

The sequential reading differs from the usual reading shown in FIG. 20as described below. In the usual reading shown in FIG. 20, data arefirst read out to the first buffer memory 123A and the second buffermemory 123B and, while the data in the buffer memory 123A are beingexternally transferred, those in the buffer memory 123B are subjected toerror correction. In the sequential reading, data reading to and errorcorrection in the buffer memory 123A are performed; while the externaldevice is being informed of the transferability, data reading to thebuffer memory 123B is performed; and while data in the buffer memory123A are being externally transferred, data in the buffer memory 123Bare subjected to error correction. Another feature of the sequentialreading is that, every time a data transfer from one of the buffermemories is completed, a sequential read command is sent from theinterface control section to the managing section.

FIG. 22 shows the flow of data rewrite operation in the flash memory ofthis embodiment. Data rewriting is started by the inputting of a rewritecommand, a rewrite address and rewrite data from the external device tothe flash memory. While the write address consists only of a sectoraddress SA for designating a sector, the rewrite address consists of asector address SA and a column address CA for designating any desiredbyte data in the sector. The entered rewrite data are once stored intothe buffer memory 123A. The interface control section, upon receivingthe rewrite command, issues a read command to the managing section andat the same time counts the number of bytes of the rewrite data to beentered to inform the managing section of the size of the data to betransferred.

Then the managing section performs address translation by using themanagement table, and sends to the memory section the read command andthe translated addresses SA′ and CA. In the memory section, data (of2096 bytes) in the data area in the designated sector of the flashmemory array 121 and management data (of 16 bytes) in the sectormanagement area are read out, and held in the buffer memory 123B. Uponcompletion of the reading of data into the buffer memory 123B, a signalto notify the completion is sent from the memory section to the managingsection, and in response to this signal the managing section controlsthe DMA transfer control circuit 137 and the ECC circuit 136 to performerror detection and correction for data in the buffer memory 123B.

Then, upon completion of the ECC processing, the managing sectioncontrols the DMA transfer control circuit 137 to transfer the rewritedata held in the first buffer memory 123A to the second buffer memory123B and to synthesize the data. More specifically, out of the data of21162 bytes of one sector read out of the flash memory array, data inthe position designated by the external device by the column address CAare replaced by the rewrite data held in the first buffer memory 123A.Then, the managing section controls the DMA transfer control circuit 137and the ECC circuit 136 to generate an ECC code for the rewritten datain the second buffer memory 123B.

After that, an erase command and address are sent to the memory sectionto have data in the sector to be rewritten erased. Upon completion ofthe erasion, as a completion signal is supplied from the memory sectionto the managing section, the managing section causes data in the buffermemory 123B to be written into the sector to be rewritten by sending awrite command and address to the memory section. Upon completion of thewriting, as a completion signal is supplied from the memory section tothe managing section, the managing section sends the completion signalto the interface control section, and the interface control sectioncontrols the host interface section to supply the completion signal tothe external device.

FIG. 23 shows the flow of data erase operation in the flash memory ofthis embodiment. The erasion of data is started by the inputting of anerase command and an erase address from the external device to the flashmemory. Incidentally in this embodiment of the invention, erasion iscarried out on a sector-by-sector basis.

When the erase command is entered, a clear signal is sent from theinterface control section 110 to the first buffer memory 123A to clearit of all the data, and at the same time a read command and address aresent to the managing section 12. This address is an address to designatethe sector subject to erasion. The purpose of sending the read commandis to set aside management information into the buffer memory in advancebecause, as shown in FIGS. 6(A) to 6(C), each sector has a managementarea for storing sector management information in addition to the dataarea for storing data as such, and erasion on a sector-by-sector basiswould result in erasion of this management information together.

Upon receiving the read command, the managing section performs addresstranslation by using the management table, and sends the read commandand the translated addresses SA′ and CA to the memory section. In thememory section, data (of 2096 bytes) of the data area 121 and managementdata (of 16 bytes) in the sector management area of a designated sectorin the flash memory array are read out and held in the second buffermemory 123B. Upon completion of the data into the buffer memory 123B, asignal to notify the completion is sent from the memory section to themanaging section and, in response to this signal, the managing sectioncontrols the DMA transfer control circuit 137 and the ECC circuit 136 toperform error detection and correction for the buffer memory 123B.

Upon completion of the ECC processing, the managing section controls theDMA transfer control circuit 137 to transfer clear data (datacorresponding to the erased state of memory cells) held in the firstbuffer memory 123A to the second buffer memory 123B and to synthesizedata. More specifically, out of the 21162 bytes of data in one sectorread out from the flash memory array, 2096 bytes of data excluding the16-byte sector management information stored in the sector managementarea replace the clear data held in the first buffer memory 123A. Then,the managing section controls the DMA transfer control circuit 137 andthe ECC circuit 136 to generate an ECC code for the rewritten data inthe second buffer memory 123B.

After that, an erase command and address are sent to the memory sectionto have data in the sector to be rewritten erased. Upon completion ofthe erasion, as a completion signal is supplied from the memory sectionto the managing section, the managing section causes data in the buffermemory 123B to be written into the sector to be rewritten by sending awrite command and address to the memory section. This causes the ECCcode and the sector management information, which has been set aside inthe buffer memory 123B, to be written into the designated sector. Uponcompletion of the writing, as a completion signal is supplied from thememory section to the managing section, the managing section sends thecompletion signal to the interface control section, and the interfacecontrol section controls the host interface section to supply thecompletion signal to the external device.

FIG. 24 shows the flow of operation to shift to the deep standby modeand that to return from the deep standby mode to the usual operationmode in the flash memory of this embodiment.

In the flash memory of this embodiment, there is available a deepstandby mode for completely turning off a boosting charge pump withinthe power supply circuit 122 of the memory section 120, a command forshifting the chip to the deep standby mode, and a command for returningit from the deep standby mode. When a command to shift to deep standbyis entered from the external device to the flash memory, a deep standbysignal to instruct a shift to the deep standby mode is asserted from theinterface control section to the memory section.

Then, the memory section either interrupts a clock supplied to theboosting charge pump within the power supply circuit 122 or stops theoperation of the clock generator circuit to turn off the charge pump.The flash memory is thereby placed in a state in which its powerconsumption is kept extremely small. When a command for returning fromthe deep standby is entered from the external device to the flashmemory, the deep standby signal supplied from the interface controlsection to the memory section is negated. Then, the memory sectionrestarts the clock supply to the boosting charge pump within the powersupply circuit 122 or actuates the clock generator circuit to turn onthe charge pump. It is thereby made possible to generate a high voltageneeded for writing into the memory array or erasing data therein.

FIG. 25 shows the flow of operation known as hot restart that takesplace at the time of turning on power supply in the flash memory of thisembodiment (see FIG. 17).

In the automatic reading at the time of turning on power supply shown inFIG. 17, a read command and an address “0” in the memory array 121 aresupplied from the interface control section 110 to the managing section130 after the completion of the loading of the management table, and thedata at the leading address in the memory array are read out andsupplied externally. Unlike that, in the hot restart shown in FIG. 25,when a PRE signal inputted to a prescribed external terminal of theflash memory varies to a low level, after the signal /MRES indicatingthis operation is either ready or busy is varied to a low level, a readcommand and an address “0” in the memory array are sent to the managingsection without loading the management table, and data at the leadingaddress in the memory array are read out and supplied externally. Thereason why the management table is not loaded is that the hot restart isan operation that is done while power supply is on and the managementtable that was loaded when power supply was turned on is already held onthe work RAM.

The PRE signal may be varied to a low level by the external device, suchas a host CPU, but another conceivable configuration is that, as shownin FIG. 26, a reset switch R-SW is connected to an external terminal, towhich the PRE signal is inputted, of a flash memory 100, and a signal/MRES indicating either a ready or a busy state supplied from the flashmemory 100 is inputted to the reset terminal of a host CPU 200, whereinthe flash memory is enabled to function as a boot device by storing atthe leading address (“0”) of the memory array of the flash memory theprogram to be executed first at the time of actuating the system.

For instance, if the power source of the system is actuated by turningon a power switch (not shown) in a state in which the reset switch R-SWis set to the source voltage terminal Vcc as shown in FIG. 26, the PREsignal rises to a high level with the rise of the source voltage Vcc asshown in FIG. 27(A). As a result, the flash memory, when it enters intoa state in which it can automatically read data at address “0” in thememory array in accordance with the operation shown in FIG. 17 andsupply them outside the chip, varies the signal /MRES indicating eitheraready or a busy state to a high level, that indicates a ready state. Inthe system illustrated in FIG. 26, as this signal is inputted to thereset terminal of the host CPU, the CPU is released from the resetstate, and enabled to start a boot operation to read data out of theflash memory.

If the reset switch R-SW is changed over to the ground side while powersupply is on, the PRE signal will fall to a low level as shown in FIG.27(B), and therefore the flash memory then automatically reads out dataat address “0” in the memory array after first varying the signal /MRESto a low level in accordance with the operation of hot restart shown inFIG. 25. When it comes to a state in which it can supply outside thechip the data that have been read out, the signal /MRES is varied to ahigh level. In the system of FIG. 26, as this signal is inputted to thereset terminal of the host CPU, the CPU is released from the resetstate, and enabled to start a boot operation to read data out of theflash memory.

Next will be described other functions the flash memory of thisembodiment is provided with.

The flash memory of this embodiment is provided with a plurality ofcommands for testing use. FIGS. 28(A) and 28(B) show the procedures ofoperation when one or the other of two such commands for testing usehave been entered. When a first test command is entered, as shown inFIG. 28(A), the managing section 130 computes the total number ofalternative sectors by referencing the reserve alternative areamanagement information (FIG. 7(C)) of the management table in the flashmemory array 121 and adding the number of entries (step S101), andwrites the number of already used alternative sectors in the alternativearea into the regular area of the flash memory array (step S102).Therefore, by reading out this number of used alternative sectors whensorting products and determining those products in which the number ofunused alternative sectors is less than a prescribed level, it is madepossible to guarantee a number, not below a certain level, of defectivesectors which can be replaced in a state of normal use and thereby toenhance the reliability of products.

When a second test command is entered, as shown in FIG. 28(B), themanaging section 130 computes the total number of alternative sectors byreferencing the reserve alternative area management information (FIG.7(C)) of the management table in the flash memory array 121 and addingthe number of entries (step S111), at the same time reads out the numberof used alternative sectors written into the memory array when the firsttest command was entered (step S112), judges whether or not the numberof used alternative sectors has increased (step S113) and, if it has,sets a flag (step S114) or, if it has not, ends the processing withoutsetting a flag. This flag can prevent products whose defective sectorsincrease in a short period of time from being shipped as satisfactoryproducts by, in conducting an aging test for instance, entering thefirst test command before the aging test, inputting the second testcommand after that test to finalize the flag, referencing the flag insubsequent sorting, and determining products with an erected flag to bedefective products.

It is also conceivable to write the number of used alternative sectorsat step S102 of FIG. 28(A) into the work RAM 135 instead of into theflash memory array. It is also conceivable to provide either in theflash memory array 121 or in the work RAM 135 the flag to be set at stepS114 of FIG. 28(B). The determination of any increase in the number ofused alternative sectors at step S113 of FIG. 28(B) may merely concernwhether or not there has been any increase but may as well concernwhether or not the increase is by a prescribed number or more.

Next will be described another flash memory which embodies the presentinvention in a different mode. In this embodiment, if the managementtable to be loaded from the flash memory array onto the work RAM at thetime of turning on power supply fails to be normally read out, access tothe memory array will be refused. A conceivable way to realize this is,for instance, to so configure the managing section that it can executeprocessing to judge whether or not the management table has beennormally read out and, if it has been, to set a flag and processing, asshown in FIG. 29, to reference a flag indicating the completion ofmanagement table loading (step S122) when a command to access the flashmemory array has been entered (step S121) thereby to check whether ornot the table is normally loaded (step S123), and to permit access tothe flash memory array only when the table is normally loaded (stepS124) or to refuse access to the flash memory array when the table isnot normally loaded, to issue a signal indicating a table error (stepS125) or to set a prescribed bit in a status register.

Although the invention made by the present inventor has been describedin specific terms with reference to embodiments thereof, obviously theinvention is not confined to these embodiments, but can be varied inmany different ways without deviating from its essentials. Each of theembodiments described above is a binary flash memory in which eachmemory element (memory cell) can store data of one bit each, but theinvention can also be applied to a multiple value flash memory in whicheach memory element can store data of two or more bits each.

Further, although the foregoing description of the embodiments did nottouch on the specific configuration of the memory array, the inventioncan be applied not only to the so-called AND type or NOR type flashmemory in which a plurality of memory elements are connected in parallelbetween bit lines and source lines but also the so-called NAND typeflash memory in which memory elements are connected in series. Theinvention is further applicable to not only two-layered gate type memorycells each having a floating gate and a control gate but also to MONOStype memory cells each having a charge accumulating layer, consisting ofa nitride film, between a control gate and a channel. In this case,electric charges may be accumulated in either the whole chargeaccumulating layer to store information of one bit each or part of thecharge accumulating layer to store information of two or more bits each.

Regarding the embodiments of the invention, while NAND/AND/SAND typeflash memories in each of which address information and data aremultiplexed and inputted/outputted via the same I/O terminal have beendescribed in specific terms, such memory may be further be provided witha flash memory interface in which address and data are separatelyinputted/outputted via different I/O terminals. In that case, terminalsindicating the type of interface may be further provided, or theselection can be triggered by the failure to select any terminalindicating the type of interface, described with respect to theembodiments. Also, some of the I/O terminals, for instance I/O [15:8],can be used as address terminals and others, [7:0], as data terminals.

While the foregoing description concerned the invention achieved by thepresent inventor mainly with respect to flash memories, which constitutethe background field of the invention, the invention is not limited towhat has been described above, but can be extensively utilized forsemiconductor memories having nonvolatile memory elements which storeinformation by applying a voltage and varying the threshold voltage.

Advantages achieved by the invention disclosed in this application inits typical aspects will be briefly described below.

Thus, as the nonvolatile memory has a replacing function and an errorcorrection according to the invention, there is no need to have anexternal controller process replacement or error correction, it is madepossible to reduce the load on the system developer and, since aplurality of sets of information address translation are stored, it ismade possible to avoid, even if any set of address translationinformation is lost, an abnormal state in which the system becomesunable to operate by having another set of such information to besubstituted for the lost information.

Furthermore, because a plurality of sets of information addresstranslation are stored in succession in two or more areas, even if datain any area storing address translation information is lost as a resultof a writing or erasing operation, address translation informationstored in other areas is not lost, so that an abnormal state in whichthe system becomes unable to operate can be avoided without fail.

1-14. (canceled)
 15. A nonvolatile memory comprising: a memory arrayincluding a plurality of nonvolatile memory cells; a control circuit;and a random access memory, wherein said memory array includes aplurality of word lines, each of which is coupled to corresponding onesof said nonvolatile memory cells, wherein said nonvolatile memory cellscoupled to each word line are capable of storing more than 2 k bytedata, wherein said control circuit is adapted to perform a readoperation for reading data stored in said memory array in accordancewith a read instruction issued from outside of the nonvolatile memory,or a write operation for writing data into said memory array inaccordance with a write instruction issued from outside of thenonvolatile memory, and wherein said control circuit is adapted to readcode data stored in a code data storage area to said random accessmemory in association with performance of a reset operation withoutreceiving said read instruction, and after completion of reading saidcode data to said random access memory, said control circuit outputssaid code data stored in said random access memory to outside of thenonvolatile memory.
 16. A nonvolatile memory according to claim 15,wherein said control circuit performs said reset operation in accordancewith detection of a supply of an operation voltage from outside of thenonvolatile memory.
 17. A nonvolatile memory according to claim 15,further comprising a reset terminal, wherein said control circuitperforms said reset operation in accordance with an enable signalreceived via said reset terminal.
 18. A nonvolatile memory according toclaim 15, further comprising a first terminal and a second terminal,wherein said control circuit is adapted to output said code data viasaid first terminal in response to receiving pulses via second terminal.19. A nonvolatile memory according to claim 17, wherein said code datastorage area is part of said memory array.
 20. A nonvolatile memoryaccording to claim 19, further comprising an error correcting circuit,wherein in performance of said read operation, said error correctingcircuit is used for detecting an error in data read out from said memoryarray.
 21. A nonvolatile memory according to claim 20, furthercomprising a register used by said control circuit.